Recently, Prof. Yao Zhiqiang, a research group of Prof.r Shao Guosheng from the National Low Carbon and Environmental Protection Materials Intelligent Design International Joint Research Center, School of Materials Science and Engineering of ZZU, has made progress in the growth of wafer level two-dimensional single-layer molybdenum telluride semiconductor films by molecular beam dynamics control. The related results were published in Advanced Materials, a leading journal in the field of material science, entitled “Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics”. Prof. Yao Zhiqiang, Prof. Shao Guosheng and Prof. Liu Suilin of the Analysis and Test Center of Sichuan University were the co-corresponding authors, master students He Qingyuan and Li Pengji the co-authors, and the School of Materials Science and Engineering of ZZU was the first unit.